Numerical Solution of Charge Transfer Problem in a 2D Silicon MOSFET Transistor
Abstract
In this paper, we consider a recently proposed hydrodynamical model that represents a quasilinear system of equations in the form of conservation laws. The conservation laws are obtained from a system of moment relations for the Boltzmann transport equation with the maximum entropy principle used in the model for a closure of the system of moments. In this paper, the hydrodynamic model is utilized to find stationary solutions that describe the motion of electrons in a 2D silicon MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor with a silicon oxide nanochannel. In the stationary case, the mathematical model is reduced to a system of elliptical quasilinear equations. To find approximate solutions of these equations, we use a computational algorithm based on the method of lines, the stabilization method, and various forms of nonstationary regularization of equations. The computational algorithm is implemented as a software package using Object Pascal in Delphi 6 environment. The results of the obtained solutions are provided.
DOI 10.14258/izvasu(2015)1.2-34
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Anile A.M., Romano V. Non parabolic band transport in semiconductors: closure of the moment equations // Cont. Mech. Thermodyn. - 1999. - V. 11.
Romano V. 2D simulation of a silicon MESFET with a non-parabolic hydrodynamical model based on the maximum entropy principle // J. Comp. Phys. - 2002. - V. 176.
Romano V. 2D Numerical Simulation of the MEP Energy - Transport Model with a Finite Difference Scheme // J. Comp. Fhys. - 2007. - V. 221.
Lab C., Caussignac P. An energy-transport model for semiconductor heterostructure devices: application to AlGaAs/ GaAs MODFETs // COMPEL. - 1999. - V. 18, № 1.
Блохин А.М., Ибрагимова А.С., Семисалов Б.В. Конструирование вычислительного алгоритма для системы моментных уравнений, описывающих перенос заряда в полупроводниках // Математическое моделирование. - 2009. - Т. 21, № 4.
Блохин А.М., Ибрагимова А.С. К вопросу о вычислении электрического потенциала для 2D кремниевого транзистора с наноканалом из оксида кремния // Математическое моделирование. - 2010. - Т. 22, № 9.
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