Computer Simulation of the Semiconductor Nanoelectromechanical Systems AIIBIVAs2 Stability after Attosecond Impulse Exposure
УДК 541.1
Abstract
The article deals with computer modeling of responses of multicomponent semiconductor nanoelectromechanical systems of arsenides to an attosecond radiation pulse at cryogenic (T1=77 K) and standard temperatures (T2=298 K). Kinetic curves of relaxation processes in ternary semiconductor nanolayers CdSiAs2, CdGeAs2, ZnSiAs2, ZnGeAs2, and nanolayers of variable composition CdSi1-xGex As2, ZnSi1-xGexAs2, Cd1-xZnxSiAs2 и Cd1-xZnxGeAs2 are obtained. This research reveals the differences in the average relaxation energy of nanolayers that depend on temperature and the amplitudes of energy fluctuations, and the time of reaching the plateau. A comparison with relaxation processes taking place at absolute zero temperatures is demonstrated. The radial distribution functions of atoms in the system before and after relaxation processes caused by impulsive action on the system of atoms in the semiconductor layer are considered. The modification of the peaks corresponding to the coordination spheres of atomic distribution depending on the composition of the nanolayer is described. The regularities of relaxation changes of the first order coordination spheres, as well as the regularities of relaxation destructions of the second and the third order coordination spheres at cryogenic and standard temperatures are revealed.
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Verma A. S. Thermal properties of chalcopyrite semiconductors // Philosophical Magazine. 2009. Vol. 89. № 2.
Jiawei L., Shifu Z., Beijun Z. XPS Analysis and Determination of Surface Damage Layer of CdGeAs2 Single Crystal // Rare Metal Materials and Engineering. 2015. Vol. 44. № 4.
AchantaV.G. Surface waves at metal-dielectric interfaces: Material science perspective // Surface waves at metal-dielectric interfaces: Material science perspective. 2020. Vol. 5.
Koroleva L.I., Zashchirinskii D.M., Khapaeva T.M. Manganese-doped CdGeAs2, ZnGeAs2 and ZnSiAs2 chalcopyrites: A new materials for spintronics // Journal of magnetism and magnetic materials. 2011. Vol. 323. No. 23.
Novotortsev V.M., Palkina K.K., Mikhailov S.G. Synthesis and Structure of Mn-Doped CdGeAs2 Single Crystals // Inorg Mater. 2005. Vol. 41. № 5.
Demin R.V., Koroleva L.I., Marenkin S.F., et al. Mn doped CdGeAs2 Chalcopyrite: A New Ferromagnet with a Curie Temperature of 355 K // XIX Mezhdunarodnaya shkola-seminar po novym magnitnym materialam mikroelekt-roniki (XIX Int. Workshop on New Magnetic Materials for Microelectronics). M., 2004.
Volkov D.A., Terenteva Y.V., Beznosyuk S.A. Attosecond nanotechnology: Quantum dots of nanoelectromechanical systems of CuInxGa1-xS2 compounds // Bulletin of the university of Karaganda-chemistry. 2019. Vol. 95. № 3.
Терентьева Ю.В., Безносюк С.А., Волков Д.А., Гайдукова А.А., Лысенко А.С. Компьютерное моделирование устойчивости нанослоев селенида цинка, легированных железом, подвергшихся импульсному воздействию // Фундаментальные проблемы современного материаловедения. 2020. Т. 17. № 3.
Терентьева Ю.В., Безносюк С.А., Волков Д.А. Компьютерное моделирование устойчивости легированных марганцем морфологических модификаций квантовых НЭМС диарсенида цинка-кремния // Фундаментальные проблемы современного материаловедения. 2020. Т. 17. № 4.
Zawilski K.T., Schunemann P.G., Pollak T.M. Glass formation and optical properties of CdGeAs2 // Journal of Crystal Growth. 2008. Vol. 310. № 7-9.
Boukabrine F., Chiker F., Khachai H. Ab initio calculation of ZnSiAs2 and CdSiAs2 semiconductor compounds // Physica B: Condensed Matter. 2011. Vol. 406. № 2.
Xu B., Han H., Sun J. The structural, electronic and optical properties of the chalcopyrite semiconductor ZnSiAs2 // Physica B: Condensed Matter. 2009. Vol. 404. № 8-11.
Copyright (c) 2021 Анастасия Александровна Гайдукова , Юлия Владимировна Терентьева , Сергей Александрович Безносюк
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